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1

Demonstration of a mode-conversion cavity add–drop filter

Pruessner, Marcel W., Khurgin, Jacob B., Stievater, Todd H., Rabinovich, William S., Bass, Robert, Boos, J. Brad, Urick, Vincent J.

Journal:

Year:

2011

Language:

english

File:

PDF, 494 KB

english, 2011

2

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

Brian R. Bennett, Mario G. Ancona, J. Brad Boos, Corwyn B. Canedy, Saara A. Khan

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 780 KB

english, 2008

3

``The World of Creative Physics''

Xia, Ling, Boos, J. Brad, Bennett, Brian R., Ancona, Mario G., del Alamo, Jesús A.

Journal:

Journal of Applied Physics

Year:

1939

Language:

english

File:

PDF, 306 KB

english, 1939

4

Measurement of the transient response of semiconductor devices to ionizing radiation

Dale McMorrow, J. Brad Boos, Joseph S. Melinger, Veronique Ferlet-Cavrois, Philippe Paillet, Olivier Duhamel, Jacques Baggio

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2007

Language:

english

File:

PDF, 317 KB

english, 2007

5

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

Brian R. Bennett, Mario G. Ancona, James G. Champlain, Nicolas A. Papanicolaou, J. Brad Boos

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 310 KB

english, 2009

6

Antimonide-based compound semiconductors for electronic devices: A review

Brian R. Bennett, Richard Magno, J. Brad Boos, Walter Kruppa, Mario G. Ancona

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 713 KB

english, 2005

7

Study of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1−XSb quantum wells

Aneesh Nainani, Toshifumi Irisawa, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 543 KB

english, 2011

8

InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

Brian R. Bennett, J. Brad Boos, Mario G. Ancona, N. A. Papanicolaou, Graham A. Cooke, H. Kheyrandish

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 300 KB

english, 2007

9

AlGaSb Buffer Layers for Sb-Based Transistors

Brian R. Bennett, Saara A. Khan, J. Brad Boos, Nicolas A. Papanicolaou, Vladimir V. Kuznetsov

Journal:

Journal of Electronic Materials

Year:

2010

Language:

english

File:

PDF, 876 KB

english, 2010

10

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

Matthew Reason, Brian R. Bennett, Richard Magno, J. Brad Boos

Journal:

Journal of Electronic Materials

Year:

2011

Language:

english

File:

PDF, 517 KB

english, 2011

11

InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material

James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman, J. Brad Boos

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 263 KB

english, 2008

12

High-frequency, 6.2 Å pN heterojunction diodes

James G. Champlain, Richard Magno, Doewon Park, Harvey S. Newman, J. Brad Boos

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 564 KB

english, 2012

13

Enhancing hole mobility in III-V semiconductors

Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 4.74 MB

english, 2012

14

Enhanced hole mobility and density in GaSb quantum wells

Bennett, Brian R., Chick, Theresa F., Ancona, Mario G., Brad Boos, J.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

15

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Engineering of strained III–V heterostructures for high hole mobility

Nainani, Aneesh, Raghunathan, Shyam, Witte, Daniel, Kobayashi, Masaharu, Irisawa, Toshifumi, Krishnamohan, Tejas, Saraswat, Krishna, Bennett, Brian R., Ancona, Mario G., Boos, J. Brad

Year:

2009

Language:

english

File:

PDF, 1.20 MB

english, 2009

16

SPIE Proceedings [SPIE MOEMS-MEMS 2007 Micro and Nanofabrication - San Jose, CA (Saturday 20 January 2007)] MEMS/MOEMS Components and Their Applications IV - All-optical micromechanical chemical sensors

Stievater, Todd H., Rabinovich, William S., Ferraro, Mike S., Boos, J. Brad, Papanicolaou, Nicolas A., Stepnowski, Jennifer L., McGill, R. Andrew, Tadigadapa, Srinivas A., Ghodssi, Reza, Henning, Albe

Year:

2007

Language:

english

File:

PDF, 1.16 MB

english, 2007

17

Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs

Warner, Jeffrey H., McMorrow, Dale, Buchner, Stephen, Boos, J. Brad, Roche, Nicolas, Paillet, Philippe, Gaillardin, Marc, Blackmore, Ewart, Trinczek, Michael, Ramachandran, Vishwa, Reed, Robert A., Sc

Journal:

IEEE Transactions on Nuclear Science

Year:

2013

Language:

english

File:

PDF, 1.27 MB

english, 2013

18

Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

Bennett, Brian R., Chick, Theresa F., Boos, J. Brad, Champlain, James G., Podpirka, Adrian A.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 927 KB

english, 2014

19

[IEEE 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM) - Santa Barbara, CA, USA (2012.08.27-2012.08.30)] 2012 International Conference on Indium Phosphide and Related Materials - Single-event transient sensitivity to gate bias in InAlSb/InAs/AlGaSb high electron mobility transistors

Ramachandran, V., Schrimpf, R. D., Reed, R. A., Zhang, E., Shen, X., Pantelides, S. T., McMorrow, D., Brad Boos, J.

Year:

2012

Language:

english

File:

PDF, 859 KB

english, 2012

20

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

Warner, Jeffrey H., McMorrow, Dale, Buchner, Stephen, Boos, J. Brad, Bennett, Brian R., Cress, Cory D., Champlain, James G., Roche, Nicolas J.-H., Paillet, Philippe, Gaillardin, Marc

Journal:

IEEE Transactions on Nuclear Science

Year:

2014

Language:

english

File:

PDF, 1.02 MB

english, 2014

21

Transient Response of Semiconductor Electronics to Ionizing Radiation. Recent Developments in Charge-Collection Measurement

McMorrow, Dale, Ferlet-Cavrois, Veronique, Paillet, Philippe, Duhamel, Olivier, Baggio, Jacques, Boos, J. Brad, Melinger, Joseph S.

Journal:

IEEE Transactions on Nuclear Science

Year:

2007

Language:

english

File:

PDF, 804 KB

english, 2007

22

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Effects of oxidant dosing on GaSb (100) prior to atomic layer deposition and high-performance antimonide-based P-channel MOSFETs with Ni-alloy S/D

Yuan, Ze, Chen, Chien-Yu, Kumar, Archana, Nainani, Aneesh, Bennett, Brian R., Boos, J. Brad, Saraswat, Krishna C.

Year:

2013

Language:

english

File:

PDF, 1.39 MB

english, 2013

23

Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

Ramachandran, V., Reed, R. A., Schrimpf, R. D., McMorrow, D., Boos, J. Brad, King, M. P., Zhang, E. X., Vizkelethy, G., Shen, X., Pantelides, S. T.

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 1.05 MB

english, 2012

24

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Growth of High Power Ge p-i-n Detectors

Thompson, Phillip E., Davidson III, Anthony, Twigg, Mark, Boos, J. Brad, Park, Doe, Tulchinsky, David

Year:

2012

Language:

english

File:

PDF, 1.29 MB

english, 2012

25

Effect of Interface States on the Performance of Antimonide nMOSFETs

Ali, Ashkar, Madan, Himanshu, Barth, Michael J., Boos, J. Brad, Bennett, Brian R., Datta, Suman

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 752 KB

english, 2013

26

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Gate bias dependence of single event charge collection in AlSb/InAs HEMTs

DasGupta, S., McMorrow, D., Reed, R. A., Schrimpf, R. D., Boos, J. Brad

Year:

2009

File:

PDF, 185 KB

2009

27

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Development of high-k dielectric for antimonides and a sub 350°C III–V pMOSFET outperforming Germanium

Nainani, Aneesh, Irisawa, Toshifumi, Yuan, Ze, Sun, Yun, Krishnamohan, Tejas, Reason, Matthew, Bennett, Brian R., Boos, J. Brad, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

Year:

2010

Language:

english

File:

PDF, 1002 KB

english, 2010

28

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Heterostructure design and demonstration of InGaSb channel III-V CMOS transistors

Yuan, Ze, Nainani, Aneesh, Bennett, Brian R., Boos, J. Brad, Ancona, Mario G., Saraswat, Krishna C.

Year:

2011

Language:

english

File:

PDF, 1.35 MB

english, 2011

29

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Ge p-i-n detectors on Si for high power density applications

Davidson, Anthony, Thompson, Phillip E., Twigg, Mark, Boos, J. Brad, Park, Doe, Tulchinsky, David

Year:

2011

Language:

english

File:

PDF, 447 KB

english, 2011

30

Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTs

DasGupta, Sandeepan, McMorrow, Dale, Reed, Robert A., Schrimpf, Ronald D., Boos, J. Brad

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 660 KB

english, 2010

31

Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

Yuan, Ze, Kumar, Archana, Chen, Chien-Yu, Nainani, Aneesh, Bennett, Brian R., Boos, John Brad, Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 770 KB

english, 2013

32

Mobility enhancement in strained p-InGaSb quantum wells

Bennett, Brian R., Ancona, Mario G., Boos, J. Brad, Shanabrook, Benjamin V.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 750 KB

english, 2007

33

A simplified D-shaped model of the mitral annulus to facilitate CT-based sizing before transcatheter mitral valve implantation

Blanke, Philipp, Dvir, Danny, Cheung, Anson, Ye, Jian, Levine, Robert A., Precious, Bruce, Berger, Adam, Stub, Dion, Hague, Cameron, Murphy, Darra, Thompson, Christopher, Munt, Brad, Moss, Robert, Boo

Journal:

Journal of Cardiovascular Computed Tomography

Year:

2014

Language:

english

File:

PDF, 1.64 MB

english, 2014

34

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Yuan, Ze, Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1011 KB

english, 2012

35

Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning

Nainani, Aneesh, Sun, Yun, Irisawa, Toshifumi, Yuan, Ze, Kobayashi, Masaharu, Pianetta, Piero, Bennett, Brian. R., Brad Boos, J., Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.93 MB

english, 2011

36

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.71 MB

english, 2011

37

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Ruppalt, Laura B., Cleveland, Erin R., Champlain, James G., Prokes, Sharka M., Brad Boos, J., Park, Doewon, Bennett, Brian R.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.49 MB

english, 2012

38

Hole mobility enhancement in In[sub 0.41]Ga[sub 0.59]Sb quantum-well field-effect transistors

Xia, Ling, Boos, J. Brad, Bennett, Brian R., Ancona, Mario G., del Alamo, Jesús A.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 437 KB

english, 2011

39

[IEEE 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Oxford, United Kingdom (2013.9.23-2013.9.27)] 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Ion-induced charge-collection transients in p-channel AlGaSb/InGaSb field-effect transistors

Warner, Jeffrey H., McMorrow, Dale P., Buchner, Stephen, Boos, J. Brad, Bennett, Brian R., Cress, Cory D., Champlain, James G., Roche, Nicolas, Paillet, Philippe, Gaillardin, Marc

Year:

2013

Language:

english

File:

PDF, 1.53 MB

english, 2013

40

Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs

McMorrow, Dale, Warner, Jeffrey, DasGupta, Sandeepan, Ramachandran, Vishwa, Boos, J. Brad, Reed, Robert, Schrimpf, Ronald, Paillet, Philippe, Ferlet-Cavrois, Veronique, Baggio, Jacques, Buchner, Steph

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 946 KB

english, 2010

41

Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs

DasGupta, Sandeepan, McMorrow, Dale, Reed, Robert A., Schrimpf, Ronald D., Boos, J. Brad, Ramachandran, Vishwa

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 702 KB

english, 2010

42

[IEEE 2010 Ninth IEEE Sensors Conference (SENSORS 2010) - Kona, HI (2010.11.1-2010.11.4)] 2010 IEEE Sensors - Chip-scale wavelength-division multiplexed integrated sensor arrays

Pruessner, Marcel W, Stievater, Todd H, Bass, Robert, Boos, J Brad

Year:

2010

Language:

english

File:

PDF, 1.26 MB

english, 2010

43

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

Bennett, Brian R., Ancona, Mario G., Boos, J. Brad

Journal:

Year:

2009

Language:

english

File:

PDF, 775 KB

english, 2009

44

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo, Luke W., Lu, Wenjie, Bennett, Brian R., Boos, John Brad, Alamo, Jesus A. del

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 538 KB

english, 2015

45

Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

Guo, Luke W., Xia, Ling, Bennett, Brian R., Boos, J. Brad, Ancona, Mario G., Alamo, Jesus A. del

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 724 KB

english, 2014

46

Single Event Measurement and Analysis of Antimony Based n-Channel Quantum-Well MOSFET With High-$\kappa$ Dielectric

Barth, Michael, Liu, Huichu, Warner, Jeffrey H., Bennett, Brian R., Boos, J. Brad, McMorrow, Dale, Roche, Nicolas, Paillet, Philippe, Gaillardin, Marc, Datta, Suman

Journal:

IEEE Transactions on Nuclear Science

Year:

2015

Language:

english

File:

PDF, 1.35 MB

english, 2015

47

SPIE Proceedings [SPIE Microlithography 2004 - Santa Clara, CA (Sunday 22 February 2004)] Metrology, Inspection, and Process Control for Microlithography XVIII - Effect of inline dose and focus monitoring and control on post-etch CD

Dinu, Berta A., Silver, Richard M., Subramony, Venkatram, Lim, Pei Chin, Goh, Dawn, Eichelberger, Brad J., Chew, Kwong Boo, Monahan, Kevin M.

Year:

2004

Language:

english

File:

PDF, 220 KB

english, 2004

48

Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- $\kappa $ Dielectric

Barth, Michael, Kumar, Archana, Warner, Jeffrey H., Bennett, Brian R., Cress, Cory D., Boos, J. Brad, Roche, Nicolas J.-H., Raine, Melanie, Gaillardin, Marc, Paillet, Philippe, McMorrow, Dale, Saraswa

Journal:

IEEE Transactions on Nuclear Science

Year:

2017

Language:

english

File:

PDF, 2.30 MB

english, 2017

49

[IEEE 2016 29th International Vacuum Nanoelectronics Conference (IVNC) - Vancouver, BC, Canada (2016.7.11-2016.7.15)] 2016 29th International Vacuum Nanoelectronics Conference (IVNC) - Planar graphene vacuum transistor performance potential

Shaw, Jonathan L., Champlain, James G., Kong, Byoung-Don, Jensen, Kevin L., Boos, J. Brad

Year:

2016

Language:

english

File:

PDF, 265 KB

english, 2016

50

Degrowth and post-extractivism: two debates with suggestions for the inclusive development framework

Brand, Ulrich, Boos, Tobias, Brad, Alina

Journal:

Current Opinion in Environmental Sustainability

Year:

2017

Language:

english

File:

PDF, 287 KB

english, 2017